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MIL-M- November 1984 MILITARY SPECIFICATION MICROCIRCUITS, D


   

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10/i 1988
MIL-M- November 1984
MILITARY SPECIFICATION
MICROCIRCUITS, DARLINGTON TRANSISTOR ARRAY, SEVEN EIGh'T GATE, MONOLITHIC SILICON
This specification approved Departments Agencies Department Defense.
Scope. This specification covers detail requirements silicon, monolithic, seven eight gate, Darlington transistor array roicrocircuits. product assurance classes choice case outlines lead finishes provided reflected complete part number.
Part number. complete number shall accordance with MIL-M-38510. 1.2.1 Device types. device types shall follows:
Device types rcult
01,02,03,04,05 Darlington transistor array, seven gate
06,07,08,09,10 Darlington transistor array, eight gate
I-2-2 Device class. device class shall product assurance level defined MIL-M-38510.
i-2.3 Case outlines. case outlines shall designated follows:
Outline letter Case outline (see MIL-M-38510, appendix
(16-lead, 1/4" 7/8"), dual-1n-11ne-package
C18-1ead 1/4" 15/16"), dual -1n-1ine-pack
Absolute maximum ratings.
Output voltage. (YCr).
Input voltage, (VjN)
Device types
Device types 10.15
Peak collector current (Ic).500
Peak Input current (IrN).25
Power dissipation (Pq)
Storage temperature range.65"C +150*C
Junction temperature (Tj) +175*C
Recommended operating conditions. Recommended operating conditions shall accordance with electrical performance characterist1cs specified table
Ambient operating temperature (T^).55*C +125*C
Absolute maximum rating power dissipation Darlington pair only.
Beneficial comments (recommendatlons, additions, deletions) pertinent data which Improving this document should addressed Rome' IA1r Development Center (RBE-2), Gr1ff1ss AFB, 13441, using
Iself-addressed Standardization Document Improvement Proposal Form 1426) this document letter._
AMSCN/A p-j-j-gj.
DISTRIBUTION STATEMENT Approved public release; distribution rr-'re
This Material Copyrighted Respective Manufacturer
miL-M-385 10/MlA
Power thermal characteristics.
pa-kaae Case Max. allowable Max. Max. outline power dissipation
77^777. dual *125'C 20'C/W 90'C/W
in-line package
18-lead, dual- -125'C 20'C/W 75'C/W
in-line package
APPLICABLE DOCUMENTS
Government documents.
2.1.1 Specification standard. fol1owing spec 1f1catior, antI standard for,
thereto, cited solicitation. SPECIFICATION MILITARY
MIL-M-38 Microci rcui General Specification for.
STANDARD
MILITARY
STD-883 Test Methods Procedures Microelectronics,
directed contracting activity.)
REQUIREMENTS
Detail specification. individual item requirements shall accordance with MIL-M-38510, specified herein.
construction, physical dlmension Thi| design cens truetion physicaT dimensions shall specified H1L-H-JB510 herein.
r^r.Ht Hi,gram ter^nal connections. circuit diagram terminal connections shall specified ngure
3.2.2 Truth table logic equations. truth table logic equations shall speci fied tigure
3.2.3 Functional schematic circuit. functional schematic circuit shall speci fied figure
3.2.4 Schematic circuits. schematic circuits submitted
mSPOSXmaammmrn'
available upon request.
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MIL-M-38510/141A
table Electrical performance characteristics devices types
Test Symbol Conditions +125*C Limits Unit
uniess otnerwise specified
lOutput leakage current IVCE 110.0
ICollector-emitter voltage jVCE(sat) -55'C
25*C
U25'c
current
forward current transfer ratio |VCE -55*C
1+25 125*C 11000
IClamp diode leakage Icurrent
IClamp diode forward voltage
ITurn-on delay JtPLH 25*C figure
iTum-off delay jtPHl +25*C figure
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Ii.-M-38510/ 141A
TABLE Electrical performance character sties aevicss types
Test
utput leakage current
oilector-emitter aturat^on voltage
Input current
Input current
Input voltage
forward current transfer ratio
Clamp diode leakage current
Clamp diode forward tage
Turn-on delay
Turn-off Je"ay
CE(sat)
Symbol
fiondi -55"C +125'C unless otherwise specified
|VCE Vjij
25*C
IlN(on) !vIN
IlM(off)
VjM(on) |VCE
|+25*C |VCE
|VCE -55*C
IVrr *125'C
lPLH
*253C figure
tPHL
*25'C '^ure
Limi
Unit
1000
1.8!
1300
10.0
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MIL-M-38510/141A
table Electrical performance characteristics devices types
Test Symbol -55* Condi 125' Limits Unit
unless otherwise specified IMTn
lOutput leakage current 1JCEX |VCE 10.0
voltage |VCE(sat)
-25'C
-125'C
Input current pINion) |VIM 3.85 1350
Input current jllN(off) <.25
Input voltage }vIN(on) -55*C
25*C hl25'C~
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MIL-M-38510/141A
TABLE Ilectricai performance characteristics devices types
Test Symbol Condi -55*C Limits Unit
unless otherwise specified -1-1-
forward current transfer ratio IhFE
*125"C 11000
diode leaicage leurrent 110.0 -.-J
diode forward voltage
delay tPLH figure
ITurn-off delay ItpHL figure
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MIL-M-38510/141A
TABLE Electrical performance characteristics devices types
Test Symbol -55* Condi tions +125'C otherxTse specified Limits Unit
unless
lOutput leakage current UCEX |VCE 10.0
Collector-emitter saturation voltage jVCE(sat) -55'C
25*C
iInput current zZM(on) |VIN
1450
Input current IfHoff
Input voltage VIN(on) -55*C
110.0
112.0
l+25*C l+125*C
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MIL-M-38510/141A
TABLE Electrical performance characteristics devices types Continued.
Test Symbol Conditions -55'C Limits Unit
unless otherwise specified
forward current (transfer ratio IKFE |VCE -55*C
IVrr I+25 11000
diode leakage 113.0
iCIamp diode forward voltage
lTur*i-on delay 'tpLH figure
ITurn-off delay jtPHL +25*C figure
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MIL-M-38510/141A
table Electrical performance characteristics devices types
Test Symbol Conditions -55'C +125 Limits Unit
unless otherwise specified
lOutput leakage current PCEX |VCE 110.0
iCollector-emitter saturation voltage |vCE(sat) -55-C
*125*C
!Input current jzIN(on) IVIN 11180 12400
Input current ^IN(off)
Input voltage |vIN(on) -55'C |VCE
1+25*C l+125*C~
forward current ratio |hFE -55'C
VCE.= 12S"C 11000
diode leakage 110.0
iClamp diode forward voltage
ITurn-on delay ItPLH *25*C figure
iTurn-off delay tPHL +25*C figure
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MlL-M-38510/lilA
3.2.5 Case outline. case outline shall specified 1.2.3.
3.2.6 Package seal raateri Package seal shall accordance with MIL-M-JBb10.
Lead material finish. lead material finish shall accordance with MIL-M-38510 herein.
Electrical performancecharacteristics. electrical performance characteristics specified table apply over ?ull recommended ambient operating temperature range, unless otherwise specified.
Electrical test requi rements. electrical test requirements each device class shal subgroups specified table electrical test: each subgroup described table III.
Marking shall accordance MIL-M- 38510.
3.6.1 Serial zation. class devices shall serialized accordance with MIL-M-385T0:
3.6.2 Correctness indexing narnings. devicas shall subjected final electrical tests specified taoie after part marking verify that they
orrec indexed identified part number. Optionally, approved electrical test devised especially this requirement.
Microcircuit group assignment. devices covered this specification shall microcircuit group number 'see MTL-M-38510, appendix
TABLE Electrical test -equirements.
test requirements Subgroups (see table III) lass Class devices devices
Interim electrical parameters (method 5004)
IFinal electrical test parameters (method 5004) 11,2,3,9 1,2,3,9
IGroup test requirements (method 5005) 11,2,3,9 1,2,3,9
IGroup end-point group class electrical parameters (method 5005) 11,2,3 1taole table delta limits
IGroup end-point electrical parameters (method 5005) 1,2,3
applies subg-oup 'see 4.2d).
QUALITY ASSURANCE PROVISIONS
Sampling inspection. Sampling inspection o-oceojres shall accordance with MIL-M- 38510 methods 5005 applicable, except modified herein.
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MIL-M-38510/141A
Screen 1ng. Screening shall accordance with method 5004 MIL-STD-883, sha11 conducted devices prior qualification quality conformance inspection. following additional criteria shall apply:
Burn-1n (method 1015 MIL-STD-883).
Class devices: Test condition using circuit shown figure
Class devices: Test condition using circuit shown figure test condition using circuit shown figure test condition using circuit shown figure
Reverse bias burn-1n (method 1015 MIL-STD-883). This screen test shall apply class devices only using circuit shown figure
Interim final electrical test parameters shall specified table herein, except Interim electrical parameters test prior burn-in optional discretion manufacturer.
percent defective allowable (PDA) class class devices shall specified MIL-M-38510, based failures from group subgroup test after cooldown final electrical test accordance with method 5004 MIL-STD-883 with Intervening electrical measurements. interim electrical parameter tests performed prior burn-in, failures resulting from burn-in screening excluded from PDA. interim electrical parameter tests prior burn-in omitted, then screening failures shall Included PDA. verified failures group subgroup after burn-In divided total number devices submitted burn-1n that shall used determined percent defective that lot, shall accepted rejected based applicable device class.
Qualification inspection. Qualification Inspection shall accordance
with MIL-M-38510 specified herein. Inspections performed shall those
specified method 5005 MIL-STD-883 herein groups inspections (see 4.4.1 through 4.4.4).
Qua!i conformance 1nspection. Quality conformance inspection shall accordance with MIL-M-38510 specified herein.
4.4.1 Grout method"
roup
Inspection. Group inspection shall accordance with table
rr^-
MlL-STD-883 follows
Electrical test requirements shall specified table herein.
Subgroups table method 5005 MIL-STD-883 shall omitted.
4.4.2 Grou method
roup
Inspection. Group inspection shall accordance with table MiL-STD-883 follows:
End-point electrical parameters shall specified table herein.
Steady-state life test class devices shall accordance with table method 5005 MIL-STD-883, using circuit shown figure alternate burn-1n conditions used, circuit shown figure shall used.
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Device types
FIGURE Schematic diagram terminal connections.
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mil-m-38510/141a
Device types
FIGURE Schematic diagram terminal connections Continued.
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MIL-M-38510/U1A
device types
Input Output
Logic level
Logic high level
FIGURE Truth table logic equation.
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MIL-M-38510/H1A
Device types
Device types
10.5
"14"
-f-O
Device types
-44-
FIGURE Functional schematic circuits.
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MIL-M-38510/141A
Device types
10.5
Device types
NOTE: Unless otherwise specified resistance values ohms.
FIGURE Functional schematic circuits Continued.
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Device types
(*5%)
-vWir-4
-AVt-f
NOTES:
Unless otherwise specified +125*C.
resistance values 500fj, percent.
device with external resistor, *5X.
device
device
device
device
FIGURE Burn-1n steady state life test circuit.
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L-M-38510/141
Device types
-WV\r-<>
WAA^-1
-WV^H
NOTES:
Unless otherwise specified
resistance values 500n, percent.
device with external resistor, *5%.
device
device
device
device
FIGURE Burn-1n steady state life test circuit Continued.
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MIL-M-38S1C/141A Device types
(*5%)
-Lis
-WW-^
NOTES:
Unless otherwise specified
resistance values ten, percent.
Input resistors optional.
figl;re Reverse bias burn-1r life test circuits.
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L-M-38510/141
Device types
(*5%)
NOTES:
Unless otherwise specified
resistance values kr., percent.
Input resistors optional.
FIGURE Reverse bias burn-1n life test circuits.
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Device types
ww-4
WW-j
NOTES:
Unless otherwise specified resistance values ten.
Input resisto-s optional.
FIGURE Accelerated burn-1n steady state life test circuit.
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L-M-38510/141
Device types
-vVwV-o
-/wv^t
NOTES:
Unless otherwise specified resistance values
Input resistors optional.
FIGURE Accelerated burn-in steady state life test circuit Continued.
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M^-M-icElj/^fi
OPEN
OPEN
OPEN
CECsat
types 04,\ only.
OPEN
OPEN
INCon)
device types only OPEN
INCon
OPEN ^50Kn,*5%
INCoff
OPEN
C=350
vCE(v)
hpE_
Increase current measure VCE, when record
FIGURE Test circuit static tests.
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Hcvirp tvoes
'PHL"
NOTES:
kHz.
Duty cycle percent.
External resistor.
FIGURE Switching time test circuits waveforms.
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Device types
PULSE DUTY CYCLE
DEVICE UNDER TEST
Ohms,
NOTES
kHz.
Duty cycle percent.
FIGURE Switching time test circuits waveforms Continued.
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MIL-M-38510/141A
Device types
*PHL
NOTES:
kHZ.
Duty cycle percent.
FIGURE Switching time test circuits waveforms Continued.
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MIL-M-38510/141A
Device types
PULSE
DUTY CYCLE _50%
DEVICE UNDER TEST
Ohms,
V0UT
NOTES
kHz.
Duty cycle percent.
FIGURE Switching time test circuits waveforms Continued.
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Device types
502!
NOTES
kHZ.
Duty cycle percent.
FIGURE Switching time test circuits waveforms Continued.
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Device types PEAK COLLECTOR CURRENT
FUNCTION DUTY CYCLE +50*C
PEAK COLLECTOR CURRENT
FUNCTION DUTY CYCLE +75*C
PERCENT DUTY CYCLE
PERCENT DUTY CYCLE
PEAK COLLECTOR CURRENT FUNCTION DUTY CYCLE +100'C
NUMBER OUTPUTS CONDUCTINO
PEAK COLLECTOR CURRENT FUNCTION DUTY CYCLE +125'C
PERCENT DUTY CYCLE
PERCENT DUTY CYCLE
Indicates reconmended maximum current
PEAK COLLECTOR CURRENT FUNCTION DUTY CYCLE +50*C
PERCENT DUTY CYCLE
PEAK COLLECTOR CURRENT FUNCTION DUTY CYCLE +75'C
PERCENT DUTY CYCLE
PEAK COLLECTOR CURRENT FUNCTION DUTY CYCLE +100'C
PEAK COLLECTOR CURRENT FUNCTION DUTY CYCLE
PERCENT DUTY CYCLE Line indicates maximum current
FIGURE Peak collector current function duty cycle Continued.
PERCENT DUTY CYCLE
Subgroup
Syafcol
'Of*
VCf<54t)
vC((sit)
'lN(off)
MIL-STD-883 Method
3007
3007
3007
3003
Feit
1-1-
TABIC III. Group Inspection type signal designation
)-10
0UTt
OUI5
teraind
OUT, OUTj OUT) OUT, 0UI5 0UT6 OUT;
OUT, OUTj OUTj OUI, OUT; 0UT6 OUT;
OUI, 0UT2 OUTj OUT* OUI; 0UT6 OUT;
OUT, OUTj OUTj OUT4 OUTj 0UT6 OUT;
OUT, OUT? OUTj OUI4 OUT5 OUT;
OUT, OUT; OUTj OUTj
OU'6
OUT;
OUT, II;-0UT? IIJ-OUT3 OUI4 OUI5 UU16 OUI;
Halts
Unit
1000
10.0
10.0
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Subgroup
-STD-B83
3001
3003
Test
NOTE: Pins open.
TABLE III. Group Inspection denlce type Continued.
TTjnurter slgntl
OUT,
OUT*
OUTc
OUT.
OUI,
OUT,
Hetsured teralnil
IN]-Out] IN2-OUI2 OUT] I*,.OUT, INc-OUTc INj-OUI,
IN.-OUI, OUT; IN]-OUI) INjOUl; OJI& IN7-OUT7
HIL-N-J8S10/141A
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Subgroup
Syrfiol
(cr*
"cum)
'ctlwtl
-STO-883 aetHod
3003
3007
3007
TABI III. Group Impection dtvlce Continued. niMber tinnii dctlgiMtian
Till
lBfc
outs
OUT;
"TIT
OUT.
"T5~
Liai
terwlntl
10.0
OUT; OUT3 OUT4 OUI5 0UI6 OUTj
I81-OUT1 OUT; IB4-OUT4 0UT5 !Bj-OUT7
QUI) OUI3 OUI4 OUT5 0UI6 OUT7
OUI; OUI3 OUT4 OUT5 0UI6 OUI;
OUT; OUT3 OUT4 OUI; 01116
OUI;
OUI;
1000
10.0
"!L-f-385ia/HU
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TABU III. Croup Inspection device Continued.
Subgroup
Symbol
lPLH
tpHI. 300)
NOTE: Pins designated open.
AIl-S1D-683
3003
lest
nuabcr signal detlgnttlon
OUI;
0UI6
OUTS
OUT.
OUT.
Malts
Measured terminal
Unit
OUT, OUT? OUT, IN4-OUT4 OUIc
ih6-out6
IN;-0U1,
IM|-OUT OUI2 IN3-OUI1 IH4-OUI4
iNj-ouis OUT&
OUT,
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335:3/1414
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XIL-H- 0/U14
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ISubgroup
its'c
SyiAol
CE(sat)
CE(sat)
CEIsat)
Mton)
M(off)
Nlonl
Nlon)
MIL-STO aethod
3007
30O7
3007
Test
3.85
3.85
3.85
TABLE 111. Group Inspection denke type Continued. sTgnai designation
3.85
).8S
3.85
3.85
OUT;
OUTg
1250
0UTs
OUT,
T'T5~
OUI1
OUI;
Measured teralnal
Halts
lUnlt
OUT,
OUT, OUT; 0UI3
OUI,
OUI5
OUTg
1350 CJti OUT; OUT, OUI5 OUTg OUT;
OUT, OUTj OUT) OUT, ours OUTg OUT;
OUT, OUT; OUT) OUT, OUI5 OUTg OUI;
OUT, OUT* OUT) OUT, OUT5 OUTg OUT,
OUT, OUT? OUT) OUT, OUTg OUTg OUT;
10.0
1350
OUT, OUT; OUT) OUI, OUIs OUTg OUI;
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TABU III. Group Continued.
Isubgroupl Sytfcol
MIl-ST0-B83 aethod
Tilt
'CE*
"CtlJItl
IN(on)
IN(on)
3007
3007
12.0
12.0
T-1-E
12.0
12.0
12.0
nwtxr tlgniT
Haiti
OUT,
0UTs
1160
1200
OUT;
OUT,
OUT)
OUT;
0UT|
OUT,
OUTj
OUTj
0UT4
OUT5
OUTt
i-1-
0VT|
OUT;
l(]-OUTj
16,-OUT,
OUTs
Kt-0U1{
I67-OUI7
1350
|350
1200
1200
r-r-r
Heuured ttralntl
jUnlt
1000
ouii
OUTj
OUTJ
OUT, OUT5 0UTt
OD'?
OUTj OUT} OUT, OUT; OUTg OUT,
OUT, OUT; OUTj OUT, 0U16 OUT7
OUT, OUT2 OUTj OUT, OUTj 0UT6 OUI7
1450
H-<1
Subgroup
Symbol
'lN(on)
IN(on)
vlN(onl
STD-883 aethod
Test
3003
'WILE 11!. Croup Inspection device type Continued.
nuSer signal designation
10.0
12.0
10.0
12.0
10.0
12.0
10.0
12.0
10.0
12.0
10.0
12.0
10.0
12.0
OUT,
"TT"
TT"T
OUT.
0U1,
""I-
OUT,
Measured teralnal
Halts
lUnit
0UI2 0UI4 0UIs out,
0U1? OUT, OUT, 0UTs
out*
OUT,
out2
OU13
our, out5 out6 out,
OUT;
our, out^ oui4 out.
out,
OUI3 OUT, 0U15 OUIfc
out,
_1-r
10.0
out,
our,
0UI5
oui,
IB,-OUTi OUT, IBj.OUT] 1B,-0I)1,
outs
0U1S OUI,
0/141A
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HK-*-
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iiiiili
iiiiiii
io8&
iiiiiii
wito
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Subgroup
Syabol
MIL-SID aethod
'lN(on)
'lM(off)
3007
3007
3007
Test
TABLE III. Group signal
-T~T
Continued,
OU!-.
OUI,
Meiiured
out, OUT;
OUI] 0U1S 0UI6 OUI;
OUT, OUT; 0UI5
our6
OUT, OUT; 0UI6 OUI;
OUI, OUI; OUI,
Malts ^Unlt
10.0
0UI5
ouij
OUI, CUI; UUI6 (IUI)
OUI,
OUI, OUI, 0U16 OUI,
2400
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irnr
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pillili iiiiiiii
1_L=
r-T- t-Li-L_L_L
h_LfJ_=_f
22222S28
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13/1
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firn
H-IQ
ri-ai
TABU III. Group Impettlon device type Continued.
Subgroup
fssc
Syrtoi
NIL-ISTO aethod
Pili
3003
3003
nuriier tigne) designation
r~rr
Haiti
|0UTg lOUTj |0UTs
I0UI;
I0UI3
1350
1350
1350
1350
1350
1)50
1350
1350
1350
1350
1350
Neesured terni
OUT; lOUT,
1350
1350
lUnlt
10.0
OUT, OUI; OUT] OUTi OUT; OUT; OUT,
IB,-OUT OUT; IBjOUTj 184-OUT
IB5-OUI5
IBs-OUTj IBg-OUIg
IN,-OUT,
1,-UUI,
OUT) in4out4
IN5-OUI; INj-OUTj INj.OUI, INg-OUTg
IN,-OUT, INj-OUTj IN4-OUT4 INj-OUT; IN6-OUT6 IN7-OUI7 INg-OUTg
Pini open.
1851
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38510/
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Group inspection. Group inspection shall accordance with table Hl'of method bOOb MIL-b D-883 follows:
End-point electrical parameters shall specified table herein.
tf.t. lif- test class devices (method 1005 MIL-STD-883) TtinnHitionB using circuit shown figure test condition using thecircuitshownonfigure test condition using circuit shown
Group inspection. Group Inspection.shall accordance with table method 5005 MlL-llb-^3. End-point electrical parameters shall specified
table herein.
Methods inspection. Method inspection shall specified appropriate tables toMows
taae current. voltages given referenced microcircuit ground tern!nal devi under test'lDUT). Currents given conventional current positive when flowing into referenced terminal.
Life test burn-in cooldown procedure. When devices measured
removal bias.
TABLE Group end-point electrical parameters
Limit Delta Unit
Test
ICEX 10.0 -0.5 -0.5
1000 -25*
PACKAGING
Packaging requirements. requirements packaging shall accordance with MIL-M-3BbiU.
NOTES
Notes. notes specified MIL-M-38510 applicable this spec cati
Ordering data. acquisition document should specify following: Complete part number (see 1.2).
device manufacturer, applicable.
Requirements certificate compliance, applicable.
Requirements notification change product process acquiring activity addition notification qualifying activity,
applicable.
Requirements failure analysis (including Hl^Vs method 5003 MIL-STD-883), corrective action reporting results,
app1i cab!e.
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Requirements product assurance options.
Requirements special lead lengths, lead forming, applicable. These requirements shall affect part number.
Requirements "JAN" marking.
Abbreviations, symbols, definitions. abbreviations, symbols, definittons used herein aredefined H1L-H-JU510, MIL-STD-1331, follows:
Ground zero voltage potential
.Collector cutoff current
VCEX. Voltage level input terminal
"""I.Forward voltage drop
.Collector-emitter saturation voltage
.-.- Current flowing into input terminal
Clamp diode leakage current
yj:_ Clamp diode forward voltage
Logistic support. Lead materials finishes (see 3.3) interchangeable. Unless otherwise specified, microclrcu1ts acquired Government logistic support will acquired device class (see 1.2.2), lead material finish (see 3.3). Longer length leads lead forming shall affect part number.
Substi tutabl11ty. cross-reference Information below presented convenience users. %ilcroc1rcuits covered this specification functionally replace listed generic-1ndustry type. Gener1c-1ndustry microclrcu types have equivalent operational performance characteristics across 11tary temperature ranges reliability factors equivalent MIL-H-38510 devTce types have slight physical variations relation case size. presence this Information shall deemed permitting substitution 9ener1c-1ndustry types MIL-M-38510 types waiver provisions MlL-M-iasiu.
Military device Generic-industry _type type_
2001
2002
2003
2004
2005
2801
2802
2803
2804
2805
Custodlans Army Navy Force NASA
Revi activities: Army Navy Force
User activities: Army Navy
Preparing activity: Force
Agent:
(Project 5962-1055)
010142
This Material Copyrighted Respective Manufacturer

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